Product specification
2PB709A
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
IE = 0; VCB = -45 V
Min
Max
-10
-5
Unit
nA
Collector cut-off current
ìA
nA
IE = 0; VCB = -45 V; Tj = 150
IC = 0; VEB = -5 V
Emitter cut-off current
IEBO
-10
260
340
460
-500
5
DC current gain
2PB709AQ
160
210
290
hFE
IC = -2 mA; VCE = -10 V
2PB709AR
2PB709AS
Collector-emitter saturation voltage
Collector capacitance
VCE(sat) IC = -100 mA; IB = -10 mA *
mV
pF
Cc
IE = ie = 0; VCB = -10 V; f = 1 MHz
Transition frequency
2PB709AQ
60
70
80
fT
IC = -1 mA; VCE = -10 V; f = 100 MHz
MHz
2PB709AR
2PB709AS
* Pulse test: tp
300 ìs; ä 0.02.
hFE Classification
TYPE
2PB709AQ
BQ
2PB709AR
BR
2PB709AS
BS
Marking
http://www.twtysemi.com
sales@twtysemi.com
2 of 2
4008-318-123
TYSEMI [ TY Semiconductor Co., Ltd ]
