Product specification
2PB1219A
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
IE = 0; VCB = -20 V
Min
Typ
Max
-100
-5
Unit
nA
Collector cut-off current
ìA
nA
IE = 0; VCB = -20 V; Tj = 150
IC = 0; VEB = -4 V
Emitter cut-off current
IEBO
-100
DC current gain
2PB1219AQ
2PB1219AR
2PB1219AS
85
170
240
340
hFE
IC = -150 mA; VCE = -10 V; *
120
170
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capacitance
VCE(sat) IC = -300 mA; IB = -30 mA; *
VBE(sat) IC = -300 mA; IB = -30 mA; *
-600
-1.5
15
mV
V
Cc
IE = ie = 0; VCB = -10 V; f = 1 MHz
pF
Transition frequency
2PB1219AQ
100
120
140
fT
IC = 50 mA; VCE = -10 V;f = 100 MHz;*
MHz
2PB1219AR
2PB1219AS
* Pulse test: tp
300 ìs; ä
0.02.
hFE Classification
TYPE
2PB1219AQ
DQ
2PB1219AR 2PB1219AS
DR DS
Marking
http://www.twtysemi.com
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sales@twtysemi.com
4008-318-123
TYSEMI [ TY Semiconductor Co., Ltd ]
