Product specification
1SS308
Unit: mm
Features
Low forward voltage: V
F (3)
= 0.92V (typ.)
Fast reverse recovery time:t
rr
= 1.6ns(typ.)
Small total Capacitance:C
T
= 2.2pF(typ.)
5
4
1
2
3
A bsolute M axim um R atings T a = 25
P aram eter
M axim um (peak) reverse voltage
R everse voltage
M axim um (peak) forward current
A verage forward current
S urge current (10 m s)
P ower dissipation
Junction tem perature
S torage tem perature range
N ote
1.U nit R ating.T otal R ating = U nit R ating
1.5
S ym bol
V
RM
V
R
I
F M
I
O
I
F S M
P
T
j
T
stg
R ating
85
80
300
(1)
100
(1)
2
(1)
200
125
-55 to +125
U nit
V
V
mA
mA
A
mW
Electrical C haracteristics T a = 25
P aram eter
S ym bol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
R everse current
Total capacitance
R everse recovery tim e
I
R (1)
I
R (2)
C
T
t
rr
C onditions
I
F
= 1 m A
I
F
= 10 m A
I
F
= 100 m A
V
R
= 30 V
V
R
= 80 V
V
R
=0 V ,f=1 M H z
I
F
= 10 m A
2.2
1.6
M in
Typ
0.61
0.74
0.92
1.20
0.1
0.5
4.0
4
A
pF
ns
V
M ax
U nit
Marking
Marking
A1
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TYSEMI [ TY Semiconductor Co., Ltd ]
