Product specification
1SS302
Features
Low forward voltage:V
F(3)
= 0.9 V(Typ)
Fast reverse recovery time:t
rr
= 1.6 ns (Typ)
Small total capacitance:C
T
= 0.9 pF(Typ)
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
M a x im u m (p e a k ) re v e rs e v o lta g e
R e v e rs e v o lta g e
M a x im u m (p e a k ) fo rw a rd c u rre n t
A v e ra g e fo rw a rd c u rre n t
S u rg e c u rre n t (1 0 m s )
P o w e r d is s ip a tio n
J u n c tio n T e m p e ra tu re
S to ra g e T e m p e ra tu re
(* ) U n it ra tin g .T o ta l ra tin g = U n it ra tin g
1 .5
S ym bol
V
RM
V
R
I
F M
I
O
I
F S M
P
T
j
T
st
g
R a tin g
85
80
3 0 0 (* )
1 0 0 (* )
2 (* )
100
125
-5 5 to + 1 2 5
U n it
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Symbol
V
F(1)
Forward voltage
V
F(2)
V
F(3)
Reverse current
Total capacitance
Reverse recovery time
I
R(1)
I
R(2)
C
t
t
rr
Test Conditions
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 30 V
V
R
= 80 V
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA
0.9
1.6
Min
Typ
0.60
0.72
0.90
1.2
0.1
0.5
4.0
4.0
A
pF
ns
V
Max
Unit
Marking
Marking
C3
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TYSEMI [ TY Semiconductor Co., Ltd ]
