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1N5365B 参数 Datasheet PDF下载

1N5365B图片预览
型号: 1N5365B
PDF下载: 下载PDF文件 查看货源
内容描述: 玻璃钝化结硅稳压二极管 [GLASS PASSIVATED JUNCTION SILICON ZENER DIODE]
分类和应用: 稳压二极管测试
文件页数/大小: 5 页 / 270 K
品牌: TRSYS [ TRANSYS Electronics Limited ]
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APPLICATION NOTE:  
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to  
determine junction temperature under any set of  
operating conditions in order to calculate its value. The  
following procedure is recommended:  
Lead Temperature, TL, should be determined from:  
TL = LAPD + TA  
LA is the lead-to-ambient thermal resistance ( /W)  
and PD is the power dissipation.  
Junction Temperature, TJ , may be found from:  
TJ = TL + TJL  
TJL is the increase in junction temperature above the  
lead temperature and may be found from Figure 3 for a  
train of power pulses or from Figure 4 for dc power.  
TJL = JLPD  
For worst-case design, using expected limits of Iz, limits  
of PD and the extremes of TJ( TJ) may be estimated.  
Changes in voltage, Vz, can then be found from:  
V =  
TJ  
VZ  
VZ, the zener voltage temperature coefficient, is fount  
from Figures 2.  
Under high power-pulse operation, the zener voltage will  
vary with time and may also be affected significantly be  
the zener resistance. For best regulation, keep current  
excursions as low as possible.  
Data of Figure 3 should not be used to compute surge  
capability. Surge limitations are given in Figure 5. They  
are lower than would be expected by considering only  
junction temperature, as current crowding effects cause  
temperatures to be extremely high in small spots  
resulting in device degradation should the limits of  
Figure. 5 be exceeded.  
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