microSDHC Card series
High Capacity microSD Card
Bus Operating Conditions
• General
Parameter
Peak voltage on all lines
All Inputs
Symbol
Min.
-0.3
Max.
Unit
Remark
VDD+0.3
V
Input Leakage Current
All Outputs
-10
-10
10
10
µA
µA
Output Leakage Current
• Power Supply Voltage
Parameter
Supply voltage
Symbol
VDD
Min.
2.7
Max.
3.6
Unit
V
Remark
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Power up time
VOH
0.75* VDD
V
IOH=-100uA@VDD Min.
IOL=100uA@VDD Min.
VOL
0.125* VDD
V
VIH
0.625* VDD VDD+0.3
VSS-0.3 0.25* VDD
250
V
VIL
V
ms
From 0v to VDD Min.
• Current Consumption
The current consumption is measured by averaging over 1 second.
‧ Before first command: Maximum 15 mA
‧ During initialization: Maximum 100 mA
‧ Operation in Default Mode: Maximum 100 mA
‧ Operation in High Speed Mode: Maximum 200 mA
‧ Operation with other functions: Maximum 500 mA.
• Bus Signal Line Load
The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus
capacitance CBUS itself and the capacitance CCARD of each card connected to this line:
CL = CHOST + CBUS + Ν*CCARD
Where N is the number of connected cards.
Parameter
Pull-up resistance
Symbol
RCMD
RDAT
Min.
10
Max.
100
Unit
Remark
kΩ
To prevent bus floating
Bus signal line capacitance
CL
40
pF
1 card
C
HOST+CBUS shall not exceed
30 pF
3
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