TS4G-32GSDHC6-P2
SDHC Memory Card + Reader P2
Bus Operating Conditions
• General
Parameter
Symbol
Min.
-0.3
Max.
Unit
V
Remark
Peak voltage on all lines
VDD+0.3
All Inputs
Input Leakage Current
All Outputs
-10
-10
10
10
µA
µA
Output Leakage Current
• Power Supply Voltage
Parameter
Supply voltage
Symbol
VDD
Min.
2.7
Max.
3.6
Unit
V
Remark
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Power up time
VOH
0.75* VDD
V
IOH=-100uA@VDD Min.
IOL=100uA@VDD Min.
VOL
0.125* VDD
V
VIH
0.625* VDD VDD+0.3
VSS-0.3 0.25* VDD
250
V
VIL
V
ms
From 0v to VDD Min.
• Current Consumption
The current consumption is measured by averaging over 1 second.
Before first command: Maximum 15 mA
During initialization: Maximum 100 mA
Operation in Default Mode: Maximum 100 mA
Operation in High Speed Mode: Maximum 200 mA
Operation with other functions: Maximum 500 mA.
•
Bus Signal Line Load
The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus
capacitance CBUS itself and the capacitance CCARD of each card connected to this line:
CL = CHOST + CBUS + Ν*CCARD
Where N is the number of connected cards.
Parameter
Symbol
RCMD
RDAT
Min.
10
Max.
100
Unit
Remark
Pull-up resistance
kΩ
To prevent bus floating
Bus signal line capacitance
CL
40
pF
1 card
CHOST+CBUS shall not exceed
30 pF
Transcend Information Inc.
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