TSM6025
ELECTRICAL CHARACTERISTICS
VIN = +5V, IOUT = 0, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C. See Note 1.
PARAMETER
OUTPUT
SYMBOL CONDITIONS
MIN
TYP
2.500
2.500
MAX
UNITS
2.495
-0.20
2.490
-0.40
2.505
0.20
2.510
0.40
15
20
25
30
V
%
V
TSM6025A
TSM6025B
TSM6025A
TSM6025B
Output Voltage
VOUT
TA = +25°C
%
TA = 0°C to +70°C
TA = -40°C to +85°C
TA = 0°C to +70°C
TA = -40°C to +85°C
6
6
6
6
Output Voltage Temperature
Coefficient (See Note 2)
VOUT
ppm/°C
ΔVOUT
ΔVIN
ΔVOUT
ΔIOUT
/
/
Line Regulation
(VOUT + 0.2V) ≤ VIN ≤ 12.6V
140
μV/V
Sourcing: 0 ≤ IOUT ≤ 500μA
Sinking: -500μA ≤ IOUT ≤ 0
0.14
0.18
0.60
0.80
Load Regulation
μV/μA
mV
Dropout Voltage (See Note 5)
OUT Short-Circuit Current
VIN -VOUT IOUT = 500μA
100
200
VOUT Short to GND
VOUT Short to IN
4
4
ISC
mA
Temperature Hysteresis
(See Note 3)
130
50
ppm
ΔVOUT
time
/
ppm/
168hr
Long-Term Stability
DYNAMIC
168hr at TA = +25°C
f = 0.1Hz to 10Hz
f = 10Hz to 10kHz
50
125
μVP-P
μVRMS
Noise Voltage
eOUT
ΔVOUT
ΔVIN
COUT
/
Ripple Rejection
VIN = 5V ±100mV, f = 120Hz
See Note 4
82
dB
nF
Capacitive-Load Stability Range
INPUT
0
2.2
Supply Voltage Range
Quiescent Supply Current
Change in Supply Current
VIN
IIN
IIN/VIN
Guaranteed by line-regulation test
VOUT + 0.2
12.6
35
2.0
V
μA
μA/V
27
(VOUT + 0.2V) ≤ VIN ≤ 12.6V
Note 1: All devices are 100% production tested at TA = +25°C and are guaranteed by characterization for TA = TMIN to TMAX, as specified.
Note 2: Temperature Coefficient is measured by the “box” method; i.e., the maximum ΔVOUT is divided by the maximum ΔT.
Note 3: Temperature hysteresis is defined as the change in the +25°C output voltage before and after cycling the device from TMIN to TMAX
.
Note 4: Not production tested; guaranteed by design.
Note 5: Dropout voltage is the minimum input voltage at which VOUT changes ≤0.2% from VOUT at VIN = 5.0V.
TSM6025DS r1p0
Page 3
RTFDS
TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
