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TS9002IM8T 参数 Datasheet PDF下载

TS9002IM8T图片预览
型号: TS9002IM8T
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗单/双电源双路比较器与参考 [Low-Power Single/Dual-Supply Dual Comparator with Reference]
分类和应用: 比较器放大器光电二极管
文件页数/大小: 11 页 / 910 K
品牌: TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
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TS9002  
1. As described below, determine the desired  
hysteresis and select resistors R4 and R5  
accordingly. This circuit has ±5mV of  
hysteresis at the input where the input  
voltage VIN will appear larger due to the  
input resistor divider.  
VHB  
R1 ꢀ  
R2 ꢀ  
 
2 x ꢁREF  
VHB  
2
1.1ꢂ2 ꢃ  
REF  
where IREF is the primary source of current out of the  
reference pin and should be maintained within the  
maximum current the reference can source. It is safe  
to maintain the current within 20µA. It is also  
important to ensure that the current from reference is  
much larger than the HYST pin input current. Given  
R2 = 2.4, the current sourced by the reference is  
0.5μA. This allows the hysteresis band and R1 to be  
approximated as follows:  
R1(kΩ) ꢀ VHB(mv)  
Figure 3. Window Detector  
Note the hysteresis is the same for both  
comparators.  
2. Choosing R1. As the leakage current at the  
INB- pin is less than 1nA, the current  
through R1 should be at least 100nA to  
minimize offset voltage errors caused by the  
input leakage current. Values within 100kΩ  
and 1MΩ are recommended. In this  
example, a 294kΩ, 1% standard value  
resistor is selected for R1.  
Board Layout and Bypassing  
While power-supply bypass capacitors are not  
typically required, it is good engineering practice to  
use 0.1μF bypass capacitors close to the device’s  
power supply pins when the power supply  
impedance is high, the power supply leads are long,  
or there is excessive noise on the power supply  
traces. To reduce stray capacitance, it is also good  
engineering practice to make signal trace lengths as  
short as possible. Also recommended are a ground  
plane and surface mount resistors and capacitors.  
3. Calculating R2 + R3. As the input voltage  
VIN rises, the overvoltage threshold should  
be 5.5V. Choose R2 + R3 as follows:  
VOTH  
R1 + Rꢄ ꢀ R1 x   
ꢃ 1  
VREF+VHYS  
Window Detector  
5.5V  
ꢀ 294kΩ x   
ꢃ 1  
1.1ꢂ2V + 5mV  
The schematic shown in Figure 3 is for a 4.5V  
undervoltage threshold detector and  
a
5.5V  
ꢀ 1.0ꢅꢂMΩ  
overvoltage threshold detector using the TS9002.  
Resistor components R1, R2, and R3 can be  
selected based on the threshold voltage desired  
while resistors R4 and R5 can be selected based on  
the hysteresis desired. Adding hysteresis to the  
circuit will minimize chattering on the output when  
the input voltage is close to the trip point. OUTA and  
OUTB generate the active low undervoltage  
indication and active-low overvoltage indication,  
respectively. If both OUTA and OUTB signals are  
ANDed together, the resulting output of the AND  
gate is an active-high, power-good signal. To design  
the circuit, the following procedure needs to be  
followed:  
4. Calculating R2. As the input voltage VIN falls,  
the undervoltage threshold should be 4.5V.  
Choose R2 as follows:  
 
VREFꢃVHYS  
VUTH  
R2 ꢀ (R1 + R2+ Rꢄ) x  
ꢃ 294k  
 
1.1ꢂ2Vꢃ5mV  
ꢀ (294kΩ + 1.0ꢅꢂMΩ) x  
ꢀ ꢅ2.2kΩ  
ꢃ 294k  
4.5  
TS9002DS r1p0  
Page 9  
RTFDS