TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
Circuit B
10µH
100µH
PN: CBC3225T101KR
L
PN: CBC3225T100KR
CIN=CSTORE
10µF
1µF
Minimum Start-Up Voltage vs STORE Output Current
Minimum Start-Up Voltage vs STORE Output Current
Circuit A with 10Ω Source Resistance (STORE=5V)
Circuit B with 10Ω Source Resistance (STORE=5V)
3.6
3.0
3.3
+25°C
3.0
2.7
2.5
2.4
-40°C
-40°C
2.0
2.1
+85°C
+85°C
+25°C
1.8
1.5
1.5
0.001
0.01
0.1
1
10
0.001 0.01
0.1
1
10
100
ISTORE - mA
ISTORE - mA
Minimum Start-Up Voltage
Minimum Start-Up Voltage
vs Source Resistance : VSTORE=1.8V
vs Source Resistance : VSTORE=3V
2.0
1.5
1.0
2.0
1.5
1.0
Circuit A
Circuit B
Circuit A
Circuit B
0.5
0
0.5
0
0
5
10
15
20
0
5
10
15
20
Source Resistance - kΩ
Source Resistance - kΩ
Page 8
TS3310DS r1p1
RTFDS
TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
