TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
Circuit B
10µH
100µH
PN: CBC3225T101KR
L
PN: CBC3225T100KR
CIN=CSTORE
10µF
1µF
Efficiency vs STORE Output Current
IN=1.2V, STORE=1.8V
Efficiency vs STORE Output Current
IN=1.2V, STORE=3V
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
Circuit B
Circuit B
Circuit A
Circuit A
0.0001 0.001 0.01 0.1
1
10
100
0.0001 0.001 0.01 0.1
1
10
100
ISTORE - mA
ISTORE - mA
Efficiency vs STORE Output Current
IN=2.4V, STORE=3V
Efficiency vs STORE Output Current
IN=2V, STORE=5V
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
Circuit B
Circuit A
Circuit A
Circuit B
0.0001
0.001 0.01 0.1
ISTORE - mA
1
10
100
0.0001 0.001 0.01
0.1
1
10
100
ISTORE - mA
Page 4
TS3310DS r1p1
RTFDS
TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
