XC2164A51CDMW 参数 Datasheet PDF下载

XC2164 Series

ELECTRICAL CHARACTERISTICS (Continued)

XC2164A51T, V Fundamental

PARAMETER

Operating Supply Voltage

"H" Level Input Voltage

"L" Level Input Voltage

"H" Level Output Voltage

"L" Level Output Voltage

Consumption Current 1

Consumption Current 2

Input pull up resistance 1

Input pull up resistance 2

SYMBOL

VDD

VIH

VIL

VOH

VOL

IDD1

IDD2

Rup1

Rup2

Cg

Internal Oscillation Capacitance

Cd

Internal Oscillation Feedback Resistance

Output Diable Leakage Current

Rf

IOZ

(*)

(*)

f=30MHz

/INH= " L ", Q0=Open

f=30MHz

ICs for use with Crystal Oscillators

3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta=30 ~ + 80

O

C)

CONDITIONS

MIN.

2.5

2.4

0.4

CMOS : 2.97V, IOH= - 8mA

CMOS : 2.97V, IOH=8mA

/INH=Open, Q0=Open

XC2164A51M, V

XC2164A51T

XC2164A51M, V

XC2164A51T

/INH="L"

/INH=0.7VDD

XC2164A51M, V

XC2164A51T

XC2164A51M, V

XC2164A51T

/INH="L"

1.0

35

5

4

2

2

2.0

70

35

20

35

20

7.0

10

MΩ

µA

pF

2.5

0.4

(8)

( 6.5 )

(4)

(4)

4.0

140

MΩ

kΩ

µA

TYP.

3.30

MAX.

3.63

UNITS

V

V

V

V

V

mA

* note 1 : the values for Cg, Cd are the designed values.

Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value (The designed value when 300MHz Crystal is used.)

SYMBOL

M

V

T

OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE

VDD = 3.3 V,

±10%

VDD = 5.0 V,

±10%

±

4.3 ppm

±

1.2 ppm

±

9.4 ppm

±

4.5 ppm

±

2.1 ppm

±

7.0 ppm

NEGATIVE RESISTANCE VALUE

VDD = 3.3V

- 130

Ω

- 150

Ω

- 660

Ω

VDD = 5.0V

- 220

Ω

- 250

Ω

- 760

Ω

5

Semiconductor Ltd.