XC2164 Series
ELECTRICAL CHARACTERISTICS (Continued)
XC2164A51T, V Fundamental
PARAMETER
Operating Supply Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
Consumption Current 1
Consumption Current 2
Input pull up resistance 1
Input pull up resistance 2
SYMBOL
VDD
VIH
VIL
VOH
VOL
IDD1
IDD2
Rup1
Rup2
Cg
Internal Oscillation Capacitance
Cd
Internal Oscillation Feedback Resistance
Output Diable Leakage Current
Rf
IOZ
(*)
(*)
f=30MHz
/INH= " L ", Q0=Open
f=30MHz
ICs for use with Crystal Oscillators
3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta=30 ~ + 80
O
C)
CONDITIONS
MIN.
2.5
2.4
0.4
CMOS : 2.97V, IOH= - 8mA
CMOS : 2.97V, IOH=8mA
/INH=Open, Q0=Open
XC2164A51M, V
XC2164A51T
XC2164A51M, V
XC2164A51T
/INH="L"
/INH=0.7VDD
XC2164A51M, V
XC2164A51T
XC2164A51M, V
XC2164A51T
/INH="L"
1.0
35
5
4
2
2
2.0
70
35
20
35
20
7.0
10
MΩ
µA
pF
2.5
0.4
(8)
( 6.5 )
(4)
(4)
4.0
140
MΩ
kΩ
µA
TYP.
3.30
MAX.
3.63
UNITS
V
V
V
V
V
mA
* note 1 : the values for Cg, Cd are the designed values.
Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value (The designed value when 300MHz Crystal is used.)
SYMBOL
M
V
T
OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE
VDD = 3.3 V,
±10%
VDD = 5.0 V,
±10%
±
4.3 ppm
±
1.2 ppm
±
9.4 ppm
±
4.5 ppm
±
2.1 ppm
±
7.0 ppm
NEGATIVE RESISTANCE VALUE
VDD = 3.3V
- 130
Ω
- 150
Ω
- 660
Ω
VDD = 5.0V
- 220
Ω
- 250
Ω
- 760
Ω
5
Semiconductor Ltd.