XC2164
Series
■ELECTRICAL
CHARACTERISTICS
XC2164x51Vx DC DC Electrical Characteristics
5.0V
●Recommended
Operating Condition
PARAMETER
Operating Voltage
Input Voltage
Operating Ambient Temperature
SYMBOL
V
DD
V
IN
Topr
CONDITIONS
MIN
4.5
V
SS
-30
TYP.
5.0
MAX.
5.5
V
DD
+80
UNITS
V
V
℃
(unless otherwise stated, V
DD
=5.0V, No Load, Ta=-30
�½�
+80℃)
fosc=4MHz to 30MHz (Fundamental)
PARAMETER
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
Supply Current 1
Supply Current 2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation Capacitance
Internal Oscillation Feedback
Resistance
Output Disable
Leakage Current
SYMBOL
V
IH
V
IL
V
OH
V
OL
I
DD1
I
DD2
Rup1
Rup2
Cg
Cd
Rf
Ioz
/I
NH
='L', V
OH
=5.0V
/I
NH
Pin
/I
NH
Pin
CMOS : 4.5V, I
OH
=-16mA
CMOS : 4.5V, I
OH
=16mA
/I
NH
=Open, Q0=Open, f=30MHz
/I
NH
='L', Q0=Open, f=30MHz
/I
NH
='L'
/I
NH
=0.7V
DD
0.5
25
3.9
4.2
0.3
{E1}
{E2-1}
1.0
50
35
35
(*)
(*)
CONDITIONS
MIN.
2.4
TYP.
MAX.
0.4
0.4
UNITS
V
V
V
V
mA
{E2-2}
CIRCUIT
1
1
2
2
3
3
4
4
-
-
5
6
2.0
100
MΩ
kΩ
pF
pF
MΩ
3.5
10
μA
(*)
3.3V
●Recommended
Operating Condition
PARAMETER
SYMBOL
Operating Voltage
Input Voltage
Operating Ambient Temperature
V
DD
V
IN
Topr
Design Value
CONDITIONS
MIN.
2.50
V
SS
-30
TYP.
3.30
MAX.
3.63
V
DD
+80
UNITS
V
V
℃
(unless otherwise stated, V
DD
=3.3V, No Load, Ta=-30�½�+80℃)
fosc=4MHz to 30MHz (Fundamental)
PARAMETER
SYMBOL
CONDITIONS
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
Supply Current 1
Supply Current 2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation Capacitance
Internal Oscillation Feedback
Resistance
Output Disable
Leakage Current
V
IH
V
IL
V
OH
V
OL
I
DD1
I
DD2
Rup1
Rup2
Cg
Cd
Rf
Ioz
/I
NH
='L', V
OH
=3.3V
/I
NH
Pin
/I
NH
Pin
CMOS : 2.97V, I
OH
=-8mA
CMOS : 2.97V, I
OH
=8mA
/I
NH
=Open, Q0=Open, f=30MHz
/I
NH
='L', Q0=Open, f=30MHz
/I
NH
='L'
/I
NH
=0.7V
DD
MIN.
2.4
TYP.
MAX.
0.4
UNITS
V
V
V
V
mA
{E4-2}
CIRCUIT
1
1
2
2
3
3
4
4
-
-
5
6
2.5
0.4
{E3}
{E4-1}
1.0
35
2.0
70
35
35
(*)
(*)
4.0
140
MΩ
kΩ
pF
pF
MΩ
7.0
10
μA
(*)
Design Value
4/20
TOREX [ TOREX SEMICONDUCTOR ]
