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XBS306S17R 参数 Datasheet PDF下载

XBS306S17R图片预览
型号: XBS306S17R
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基势垒二极管, 3A , 60V型 [Schottky Barrier Diode, 3A, 60V Type]
分类和应用: 二极管
文件页数/大小: 3 页 / 78 K
品牌: TOREX [ TOREX SEMICONDUCTOR ]
 浏览型号XBS306S17R的Datasheet PDF文件第2页浏览型号XBS306S17R的Datasheet PDF文件第3页  
XBS306S17
Schottky Barrier Diode, 3A, 60V Type
ETR1616-002
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: V
F
=0.59V (TYP.)
: I
F(AV)
=3A
: V
RM
=60V
■APPLICATIONS
●Rectification
●Protection
against reverse connection of battery
■ABSOLUTE
MAXIMUM RATINGS
Ta=25℃
PARAMETER
Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Forward Current (Average)
Non Continuous
Forward Surge Current
Junction Temperature
Storage Temperature Range
*1
■PACKAGING
INFORMATION
SYMBOL
V
RM
V
R
I
F(AV)
I
FSM
Tj
Tstg
RATINGS
60
60
3
50
125
-55∼+150
UNIT
V
V
A
A
*1: Non continuous high amplitude 60Hz half-sine wave.
■MARKING
RULE
①②③④⑤⑥:
306S17(Product Number)
⑦⑧
: Assembly Lot Number
SMA
Cathode Bar
Unit: mm
■PRODUCT
NAME
PRODUCT NAME
XBS306S17□
*
DEVICE ORIENTATION
R
: Embossed tape, standard feed
*
Please put the device orientation type “R”.
■ELECTRICAL
CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time
*2
Ta=25℃
LIMITS
MIN.
-
-
-
-
-
-
TYP.
0.145
0.59
3
9
195
55
MAX.
-
0.66
-
300
-
-
UNIT
V
V
μA
μA
pF
ns
SYMBOL
V
F1
V
F2
I
R1
I
R2
Ct
trr
I
F
=200μA
I
F
=3A
V
R
=30V
V
R
=60V
TEST CONDITIONS
V
R
=1V , f=1MHz
I
F
=I
R
=10mA , irr=1mA
*2:trr measurement circuit
Bias
Device Under test
Pulse Generatrix
Oscilloscope
1/3