XBS303V17R-G
Schottky Barrier Diode, 3A, 30V Type
ETR1614-001a
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: V
F
=0.355V (TYP.)
: I
F(AVE)
=3A
: V
RM
=30V
■APPLICATIONS
●Rectification
●Protection
against reverse connection of battery
■ABSOLUTE
MAXIMUM RATINGS
Ta=25℃
PARAMETER
Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Forward Current (Average)
Non Continuous
Forward Surge Current
Junction Temperature
Storage Temperature Range
*1
■PACKAGING
INFORMATION
SYMBOL
V
RM
V
R
I
F(AVE)
I
FSM
Tj
Tstg
RATINGS
30
30
3
60
125
-55½+150
UNIT
V
V
A
A
℃
℃
*1： Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
Cathode Bar
■MARKING
RULE
①②③④⑤⑥:
303V17(Product Number)
⑦⑧
: Assembly Lot Number
SMA
Unit: mm
■PRODUCT
NAME
PRODUCT NAME
XBS303V17R-G
XBS303V17R
DEVICE ORIENTATION
SMA (Halogen & Antimony free)
SMA
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL
CHARACTERISTICS
PARAMETER
SYMBOL
V
F1
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time
*2
Ta=25℃
LIMITS
MIN.
-
-
-
-
-
-
TYP.
0.265
0.295
0.355
0.35
385
90
MAX.
0.34
0.36
0.39
3
-
-
UNIT
V
V
V
mA
pF
ns
TEST CONDITIONS
I
F
=0.5A
I
F
=1A
I
F
=3A
V
R
=30V
V
R
=1V , f=1MHz
I
F
=I
R
=10mA , irr=1mA
V
F2
V
F3
I
R
Ct
trr
Bias
Pulse Generatrix
*2：trr measurement circuit
Device Under test
Oscilloscope
1/3
TOREX [ TOREX SEMICONDUCTOR ]
