XBS104V14R-G
Schottky Barrier Diode, 1A, 40V Type
ETR1610-002
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
Environmentally Friendly
: V
F
=0.365V (TYP.)
: I
F(AV)
=1A
: V
RM
=40V
: EU RoHS Compliant, Pb Free
■APPLICATIONS
●Rectification
●Protection
against reverse connection of battery
■ABSOLUTE
MAXIMUM RATINGS
PARAMETER
Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Forward Current (Average)
Non Continuous
Forward Surge Current
Junction Temperature
Storage Temperature Range
*1
■PACKAGING
INFORMATION
Ta=25℃
UNIT
V
V
A
A
℃
℃
SYMBOL
V
RM
V
R
I
F(AV)
I
FSM
Tj
Tstg
RATINGS
40
40
1
20
125
-55½+150
*1： Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
Cathode Bar
■MARKING
RULE
①:
0 (Product Number)
②:
Assembly Lot Number
SOD-123A
Unit : mm
■PRODUCT
NAME
PRODUCT NAME
XBS104V14R-G
XBS104V14R
* The device orientation is fixed in its embossed tape pocket.
DEVICE ORIENTATION
SOD-123A(Halogen & Antimony free)
SOD-123A
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
■ELECTRICAL
CHARACTERISTICS
PARAMETER
SYMBOL
V
F1
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time
*2
Ta=25℃
LIMITS
MIN.
-
-
-
-
-
-
TYP.
0.23
0.30
0.365
0.25
150
41
MAX.
0.315
0.385
0.41
2
-
-
UNIT
V
V
V
mA
pF
ns
TEST CONDITIONS
I
F
=100mA
I
F
=500mA
I
F
=1A
V
R
=40V
V
R
=1V , f=1MHz
I
F
=I
R
=10mA , irr=1mA
V
F2
V
F3
I
R
Ct
trr
Bias
*2：trr measurement circuit
Device Under test
Pulse Generatrix
Oscilloscope
1/3
TOREX [ TOREX SEMICONDUCTOR ]
