XBS013V1DR-G
Schottky Barrier Diode, 100mA, 30V Type
ETR1618-005
■FEATURES
Ultra Small Package
Low VF
■APPLICATIONS
●Low
Current Rectification
■ABSOLUTE
MAXIMUM RATINGS
Ta=25℃
PARMETER
Repetitive Peak Voltage
Reverse Voltage (DC)
Forward Current (Average)
Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
*1
■PACKAGING
INFORMATION
0.30±0.05
0.20±0.03
SYMBOL
V
RM
V
R
I
F(AV)
I
FSM
Tj
Tstg
RATINGS
30
30
100
0.5
150
-40∼+150
UNITS
V
V
mA
A
℃
℃
*1) 60Hz Half sine wave, 1 cycle, Non-Repetitive.
■MARKING
RULE
①：1
(Product Number)
a,b,c,d,e：Lot Number
TOP
BOTTOM
①
Unit: mm
■PRODUCT
NAME
PRODUCT NAME
XBS013V1DR-G
*
*
PACKAGE
USP-2B01
*
The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL
CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
●NOTES ON USE
1. A package of this IC is a surface mounted package 0603 size with backside electrode structure.
for the electrodes is weak due to its structure.
deformation and mechanical stress.
SYMBOL
V
F1
I
R
TEST CONDITIONS
I
F
=10mA
V
R
=10V
LIMITS
MIN.
-
-
TYP.
-
-
MAX.
0.37
7
Ta=25℃
UNITS
V
μA
Compare to other packages, fixation strength
Please keep away from mechanical stress to the product when mounting or after mounting.
2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board
1/3
TOREX [ TOREX SEMICONDUCTOR ]
