欢迎访问ic37.com |
会员登录 免费注册
发布采购

XBS013R1DR-G 参数 Datasheet PDF下载

XBS013R1DR-G图片预览
型号: XBS013R1DR-G
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基势垒二极管, 100mA时30V型 [Schottky Barrier Diode, 100mA, 30V Type]
分类和应用: 二极管
文件页数/大小: 3 页 / 87 K
品牌: TOREX [ TOREX SEMICONDUCTOR ]
 浏览型号XBS013R1DR-G的Datasheet PDF文件第1页浏览型号XBS013R1DR-G的Datasheet PDF文件第3页  
XBS013R1DR-G
■TYPICAL
PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
100
100
Ta=125℃
Forward Current I
F
(mA)
Reverse Current I
R
(uA)
Ta=125℃
10
75℃
10
100℃
1
75℃
25℃
1
0.1
25℃
-25℃
0.1
0.0
0.2
0.4
0.6
0.8
0.01
0
10
20
30
Forward Voltage V
F
(V)
(3) Forward Voltage vs. Operating Temperature
Reverse Voltage V
R
(V)
(4) Reverse Current vs. Operating Temperature
0.6
100
VR=20V
Reverse Current I
R
(uA)
Forward Voltage V
F
(V)
10
10V
0.4
IF=10mA
1
0.2
1mA
0.1
0.0
-50
0
50
100
150
0.01
0
50
100
150
Operating Temperature Ta (℃)
(5) Inter-Terminal Capacity vs. Reverse Voltage
Operating Temperature Ta (℃)
(6) Average Forward Current vs. Operating Temperature
25
Average Forward Current IF
AV
(A)
30
Inter-Terminal Capacity Ct (pF)
0.2
20
15
0.1
10
5
Ta=25℃
0
0
10
20
0.0
0
50
100
150
Reverse Voltage V
R
(V)
Operating Temperature Ta (℃)
2/3