XBP06V1E4MR-G
■TYPICAL
PERFORMANCE CHARACTERISTICS
(1) Reverse Current vs. Breakdown Voltage
(2) Reverse Current vs. Reverse Voltage
100
10
Reverse Current I
R
(mA)
75℃
Reverse Current I
R
(uA)
10
1
Ta=125℃
75℃
25℃
1
25℃
-25℃
0.1
Ta=125℃
0.1
0.01
-25℃
0.01
0.001
0.001
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0.0001
0
1
2
3
4
5
6
Breakdown Voltage V
BR
(V)
(3) Breakdown Voltage vs. Operating Temperature
Reverse Voltage V
R
(V)
(4) Reverse Current vs. Operating Temperature
8.0
7.5
Reverse Current I
R
(uA)
10
Breakdown Voltage V
BR
(V)
1
V
R
=5.25V
5V
7.0
6.5
6.0
5.5
5.0
-50
0
50
100
I
R
=1mA
0.1
0.01
150
0.001
-50
0
50
100
150
Operating Temperature Ta (℃)
(5) Inter-Terminal Capacity vs. Reverse Voltage
Operating Temperature Ta (℃)
(6) Forward Current vs. Forward Voltage
400
Inter-Terminal Capacity Ct (pF)
350
300
250
200
150
100
50
0
0
1
2
3
4
f=1MHz
Forward Current I
F
(mA)
1000
100
Ta=125℃
75℃
10
1
25℃
Ta=25℃
0.1
-25℃
0.01
5
6
0
0.2
0.4
0.6
0.8
1
1.2
Reverse Voltage V
R
(V)
Forward Voltage V
F
(V)
2/4
TOREX [ TOREX SEMICONDUCTOR ]
