PIN DIODE
NHigh
Power Handling
NSmall
Capacitance at Zero Bias, Extremely
Small Reverse Bias
NSmall
Series Order Resistance
NSmall
Insertion Loss, High Isolation
NSurface
Mount Type (for reflow assembly)
■Applications
GHigh
Power Antenna Switch
(10W output two-way radio)
■General Description
The XB15A709A0HR PIN diode is designed for solid state antenna
switching applications in mobile radios.
The XB15A709A0HR employs a square outline which makes it suitable
for reflow assembly on surface mounting.
■Dimensions
CATHODE MARK
(RED)
Unit : mm
POWER DISSIPATION TEST BOARD
XB15A709
PRINT BOARD
MIN. 1.9
MAX. 2.5
COPPERPLATE
(t=35µm)
2.9mm
26mm
MIN. 0.1
MAX. 0.8
MIN. 2.5
MAX. 3.5
MIN. 1.9
MAX. 2.5
20mm
50mm
(GLASS EPOXY, THICKNESSt=1.6 mm)
20mm
■Absolute Maximum Ratings
SYMBOL
V
R
P
Tj
Tstg
PARAMETER
Reverse Voltage
Power Dissipation
(surface contact)*
Junction Temperature
Storage Temperature
RATINGS
50
1
*Glass Epoxy, t=1.6mm
175
-55 ~ 175
Ta=25
O
C
UNITS
V
W
O
O
C
C
■Electrical Characteristics
SYMBOL
I
R
V
F
Ct
r
fs
R
P
PARAMETER
Reverse Current
Forward Voltage
Diode Capacitance
Forward Series Resistance
Parallel Resistance
TEST CONDITIONS
MIN
V
R
= 50V
I
F
= 50mA
V
R
= 40V, f = 1MHz
I
F
= 50mA, f = 100MHz
V
R
= 0V, f = 100MHz
1.0
0.5
3.0
LIMITS
TYP
MAX
10
1.0
1.2
0.75
Ta=25
O
C
UNITS
µA
V
pF
Ω
kΩ
15
1063
TOREX [ TOREX SEMICONDUCTOR ]
