XB1117
Series
■ABSOLUTE
MAXIMUM RATINGS
XB1117P501
PARAMETER
Input Voltage
Thermal Resistance
(Junction to Case)
Thermal Resistance
(Junction to Ambient)
Power Dissipation
(ΔT=100℃)
Operating Temperature Range
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature
SYMBOL
V
IN
θJ
C
θJ
A
P
D
Topr
T
j
Tstg
Tlead
RATINGS
10.0
15
℃/W
160
625
0 ~＋70
0 ~＋125
- 65 ~＋150
260
mW
UNITS
V
℃
*Stress above the listed absolute maximum rating may cause permanent damage to the device.
** The rated values of the XB1117P18 / 25 / 30 (V
OUT
=1.8V, 2.5V and 3.0V) and XB1117K type are different from that
of the XB1117P50 (V
OUT
=5.0V).
■ELECTRICAL
CHARACTERISTICS
XB1117P501
PARAMETER
Output Voltage
Line Regulation
Load Regulation
Dropout Voltage
Current Limit
Supply Current
Temperature
Coefficient
Temperature Stability
SYMBOL
V
OUT
ΔV
OUT1
ΔV
OUT2
V
dif
I
LIM
I
SS
T
C
T
S
V
IN
=7.0V
I
OUT
=0A
7.0V≦V
IN
≦9.0V
I
OUT
=0A
V
IN
=7.0V
0A≦I
OUT
≦1.0A
ΔV
OUT
=±1％
0A≦I
OUT
≦1.0A
7.0V≦V
IN
≦10.0V
V
IN
=7.0V
0A≦I
OUT
≦1.0A
7.0V≦V
IN
≦10.0V
0A≦I
OUT
≦1.0A
V
IN
=7.0V
I
OUT
=100mA
CONDITIONS
MIN.
4.950
4.900
-
-
-
-
-
1.0
-
-
*Over Temp.
-
TYP.
5.000
5.000
1
5.0
10.1
1.2
1.3
1.5
6
50
0.5
MAX.
5.050
5.100
6
15.2
20.2
1.4
-
-
13
-
-
mV
Ta=25℃
UNITS
V
*Over Temp.
*Over Temp.
*Over Temp.
*Over Temp.
*Over Temp.
*Over Temp.
V
A
mA
ppm/℃
％
*Over Temp. = Over Temperature（0∼＋70℃）
4/12
TOREX [ TOREX SEMICONDUCTOR ]
