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XB0ASB03A1BR_001 参数 Datasheet PDF下载

XB0ASB03A1BR_001图片预览
型号: XB0ASB03A1BR_001
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基势垒二极管500毫安30V型 [Schottky Barrier Diode 500mA 30V Type]
分类和应用: 二极管
文件页数/大小: 4 页 / 116 K
品牌: TOREX [ TOREX SEMICONDUCTOR ]
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XB0ASB03A1BR
Schottky Barrier Diode 500mA 30V Type
ETR1602_001
■GENERAL
DESCRIPTION
●Small
package, SOD-323
Suitable for compact, low profile circuit designs
●Low
Forward Voltage (VF=400mV@IF=500mA)
●Short
reverse recovery time (trr=10ns)
■APPLICATIONS
●Rectification
of compact DC/DC converter
●Surge
absorption caused by counter force of
compact motors
●Protection
against reverse connection of
battery
■FEATURES
500mA, 30V Type
Low VF 400mV @ 500mA (TYP.)
Small Package
: SOD-323
■ABSOLUTE
MAXIMUM RATINGS
PARAMETER
Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Forward Current (Average)
Non Continuous Forward Surge Current*1
Junction Temperature
Storage Temperature Range
*1: Non continuous high amplitude 60Hz half-sine wave.
SYMBOL
V
RM
V
R
I
F(AV)
I
FSM
Tj
Tstg
RATINGS
30
20
0.5
5
125
-55~+150
Ta = 25℃
UNIT
V
V
A
A
■ELECTRICAL
CHARACTERISTICS
PARAMETER
Forward Voltage (DC)
Reverse Current (DC)
Inter-Terminal Capacity
Reverse Recovery Time *2
SYMBOL
V
F
1
V
F
2
I
R
Ct
trr
TEST CONDITIONS
I
F
=100mA
I
F
=500mA
V
R
=20V
V
R
=10V, f=1MHz
I
F
=I
R
=10mA, irr=1mA
LIMITS
MIN.
TYP.
0.4
12
10
MAX.
0.36
0.46
100
Ta=25℃
UNITS
V
V
μA
pF
ns
Note) 1. This product has a weakness for an electroshock such as electrostatic.
Please be careful of an electrification to human body and an electric leakage in the application.
2. *2 : trr measurement circuit
Bias
IF
trr
t
0
A
irr
IR
Pulse Generatrix
Oscilloscope
1/4