Power MOS FET
NN-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance: 0.105Ω (max)
NGate
Protect Diode Built-in
NUltra
High-Speed Switching
NSOT-89
Package
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP161A11A1PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds(on)=0.065Ω(Vgs=10V)
: Rds(on)=0.105Ω(Vgs=4.5V)
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage
: 4.5V
High density mounting
: SOT-89
■Pin Configuration
■Pin Assignment
PIN
NUMBER
1
2
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
1
G
2
D
3
S
3
11
SOT-89
（TOP VIEW）
■Equivalent Circuit
■Absolute Maximum Ratings
Ta=25˚C
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
30
±20
4
16
4
2
150
-55~150
UNITS
V
V
A
A
A
W
˚C
˚C
1
2
N-Channel MOS FET
(1 device built-in)
3
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Note: When implemented on a ceramic PCB
838
TOREX [ TOREX SEMICONDUCTOR ]
