XP132A1275SR
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
10000
Vgs=0V, f=1MHz, Ta=25℃
SWITCHING TIME vs. DRAIN CURRENT
1000
Vgs=-5V, Vdd≒-10V, PW=10μs, duty≤1%, Ta=25℃
Capacitance:C (pF)
1000
Ciss
Coss
Crss
Switching Time:t (ns)
tf
100
td(off)
tr
100
10
td(on)
10
0
-5
-10
-15
-20
1
0
-2
-4
-6
-8
-10
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
-10
Vds=-10V, Id=-5A, Ta=25℃
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
-20
Ta=25℃, Pulse Test
Gate-Source Voltage:Vgs (V)
-8
Reverse Drain Current:Idr (A)
-16
-4.5V
-6
-12
-2.5V
-4
-8
-2
-4
Vgs=0V,4.5V
0
0
10
20
30
40
0
0
-0.2
-0.4
-0.6
-0.8
-1
Gate Charge:Qg (nc)
Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Standardized Transition Thermal resistance:γs(t)
11
10
Rth (ch-a) = 50℃/W (Implemented on a glass epoxy PCB)
1
Single Pulse
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (sec)
738
TOREX [ TOREX SEMICONDUCTOR ]
