THCV213-214_Rev.2.40_E
Electrical Characteristics
CMOS/TTL DC Specifications
THCV213: VDD=VDD=LVDSVDD=PLLVDD, THCV214: VDD=VDD=VDDO=LVDSVDD=PLLVDD
Symbol
VIH
VIL
Parameter
Conditions
Min
2.0
GND
Typ
-
-
Max
VDD
0.8
Unit
V
V
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
VDD= 3.0V ~ 3.6V
IOH = -4mA
VOH
2.4
-
-
V
VDD= 3.0V ~ 3.6V
IOL=4mA
0V ≤ VIN ≤ VDD
VOL
IIL
Low Level Output Voltage
-
-
-
-
0.4
V
Input Leak Current
±10
uA
THCV213 DC Specifications
VDD=VDD=LVDSVDD=PLLVDD
Symbol
VOD
Parameter
Differential Output Voltage
Conditions
RL=100Ω,
PRE<1:0>=L,L
Min
Typ
Max
Unit
250
350
450
mV
ΔVOD
VOC
Change in VOD between
complementary output states PRE<1:0>=L,L
Common Mode Voltage
RL=100Ω,
-
-
35
mV
V
RL=100Ω,
PRE<1:0>=L,L
1.125
1.25
1.375
ΔVOC
Change in VOC between
complementary output states PRE<1:0>=L,L
Output Short Circuit Current VOUT=0V,RL=100Ω
Output TRI-STATE Current
RL=100Ω,
-
-
-
-
-
-
35
24
mV
mA
uA
IOS
IOZ
PDWN=L,
VOUT=0V to VDD
±10
THCV214 DC Specifications
VDD=VDD=VDDO=LVDSVDD=PLLVDD
Symbol
VTH
VTL
Parameter
Differential Input High Threshold
Differential Input Low Threshold
Conditions
VIC = +1.2V
Min
-
-100
Typ
-
-
Max
100
-
Unit
mV
mV
IILD
Differential Input Leakage Current VIN = 2.4V/0V
VDD = 3.6V
-
-
±10
uA
Copyright©2014 THine Electronics, Inc.
THine Electronics, Inc.
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