TIGER ELECTRONIC CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
S8050
TRANSI STOR (NPN)
SOT-23
FEATURES
Complimentary to S8550
Collector Current: I
C
=0.5A
MARKING: J3Y
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
1. BASE
2. EMITTER
3. COLLECTOR
Value
40
25
5
0.5
0.3
150
-55-150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
Test conditions
I
C
= 100
μ
A, I
E
=0
Min
40
25
5
0.1
0.1
0.1
120
50
0.6
1.2
150
V
V
MHz
350
Typ
Max
Unit
V
V
V
μ
A
μ
A
μ
A
I
C
=1mA, I
B
V
(BR)CEO
= 0
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
I
E
=100
μ
A, I
C
=0
V
CB
=40 V , I
E
0
=
= 0
V
CB
= 20V , I
E
= 0
V
EB
= 5V , I
C
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 500mA
I=500 mA, I
B
= 50mA
I
C
=500 mA, I
B
= 50mA
V
CE
= 6V, I
C
= 20mA
DC current gain
H
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
f=
30MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
L
120-200
H
200-350
B,Dec,2011
TGS [ Tiger Electronic Co.,Ltd ]
