TIGER ELECTRONIC CO.,LTD
MMBT5401LT1
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The
MMBT5401LT1
is designed for general purpose applications
requiring high breakdown voltages.
Features
•
High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
•
Complements to NPN Type
MMBT5551LT1.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature .............................................................................................. -55~+150
°C
Junction Temperature ..................................................................................... +150°C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 160 V
VCEO Collector to Emitter Voltage .................................................................................... 150 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ......................................................................................................... 500mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Cob
Min.
160
150
5
-
-
-
-
-
50
60
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
200
500
1
1
-
240
-
300
6
Unit
V
V
V
nA
mV
mV
V
V
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=120V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHZ
MHz
pF
TIGER ELECTRONIC CO.,LTD
TGS [ Tiger Electronic Co.,Ltd ]
