TIGER ELECTRONIC CO.,LTD
MMBT3904LT1
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The
MMBT3904LT1
is designed for general purpose switching amplifier
applications.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature............................................................................................... -65~+150°C
Junction Temperature......................................................................................................+150°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current ....................................................................................................... 200 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Min.
60
40
6
-
-
-
650
-
40
70
100
60
30
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
200
300
850
950
-
-
300
-
-
-
4
Unit
V
V
V
nA
mV
mV
mV
mV
Test Conditions
IC=10uA
IC=1mA
IC=10uA
VCE=30V, VBE=-3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
MHz
pF
TIGER ELECTRONIC CO.,LTD