TIGER ELECTRONIC CO.,LTD
MMBT3906LT1
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The
MMBT3906LT1
is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature......................................................................................................+150°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ........................................................................................................ 200mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Min.
40
40
5
-
-
-
0.65
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
0.2
-
0.84
-
-
-
-
-
-
-
Max.
-
-
-
50
0.25
0.4
0.85
0.95
-
-
300
-
-
-
4.5
Unit
V
V
V
nA
V
V
V
V
Test Conditions
IC=10uA
IC=1mA
IC=10uA
VCE=30V, VBE=3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
MHz
pF
TIGER ELECTRONIC CO.,LTD