SMD Type
Thyristor
4 Quadrants Sensitive TRIACS
KTA1A60 / KTA1A80
■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.)
Test Conditions
Parameter
Symbol
Min Typ. Max Unit
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
V
V
DRM
RRM
KTT1A60
KTT1A80
600
Sine wave, 50/60Hz, Gate open
V
800
50
5
uA
mA
uA
T
J
= 25℃
= 125℃
= 25℃
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
I
I
DRM
RRM
TJ
V
DRM=VRRM
50
5
T
J
mA
TJ
= 125℃
IT=1.4A,IG=20mA
On-state Voltage
V
TM
GT
1.2
1.6
1.5
2
V
1+,1-,3-
3+
Gate Trigger Voltage
V
V
V
D
=12V, R
L
=330Ω
=330Ω
1+,1-,3-
3+
5
Gate Trigger Current
I
GT
D
=12V, R
=200mA
L
mA
12
5
I
T
Holding Current
IH
Critical Rate of rise of off-state Voltage
Non-Trigger Gate Voltage (Note.1)
d
V
/dt
V
V
D
D
= 2/3 VDRM,T
J
= 125℃
10
V/us
V
V
GD
= 12V, R
L
=330Ω, T
J
=125℃
0.2
Note.1: Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%
■
M
h
a
F
r
E
ki
NO
Marking
C
nglassification
KTT1A60
KTT1A80
1A60
1A80
■ Typical Characterisitics
130
120
110
100
90
1.2
1.0
0.8
0.6
0.4
180o
150o
30o
60o
120o
90o
90o
120o
150o
60o
80
0.2
180o
30o
0.2
70
0.0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.4
0.6
0.8
1.0
R.M.S. on state current, IT(RMS) [A]
R.M.S. on state current, IT(RMS) [A]
Fig 1. R.M.S. current vs. Power dissipation
Fig 2. R.M.S. current vs. Case temperature
2
TGS [ Tiger Electronic Co.,Ltd ]
