TIGER ELECTRONIC CO.,LTD
Product specification
NPN Epitaxial Silicon Transistor
DESCRIPTION
High Speed Switching Industrial Use
◆
Complement to KSA1010
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
O
KSC2334
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value Unit
150
100
7
7.0
3.5
40
150
-55~15
0
V
V
V
A
A
W
o
C
C
Storage Temperature
o
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Symbol
Test Conditions
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=30mA, I
B
=0
V
CE
=5.0V, I
C
=0.5A
V
CE
=5.0V, I
C
=3.0A
V
CE
=5.0V, I
C
=5.0A
Min.
—
—
100
40
40
20
—
—
—
Typ.
—
—
—
—
—
—
—
—
0.5
Max.
10
10
—
—
240
—
0.5
1.5
—
V
V
μ
s
Unit
μ
A
μ
A
V
O
I
CEO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
h
FE(2)
R: 40 ~ 80
O: 70 ~ 140
V
CE(sat)
I
C
=5.0A,I
B
=500mA
V
BE(sat)
I
C
=5.0A,I
B
=500mA
t
S
I
B1
= -I
B2
= 0.5A R
L
= 10
Ω
Y: 120 ~ 240
TGS [ Tiger Electronic Co.,Ltd ]
