TIGER ELECTRONIC CO.,LTD
Product specification
Thyristors logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristor in a plastic envelope,
intended for use in general purpose switching and phase
control applications. This device is intended to be
interfaced directly to microcontrollers, logic integrated
circuits and other low power gate trigger circuits.
C106M
Parameter
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
Max. Operating Junction
Temperature
Storage Temperature
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
T
j
T
stg
Max
600
2.5
4.0
38
110
-45~150
Unit
V
A
A
A
o
C
C
o
Parameter
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
On-state voltage
Holding current
Latching current
Gate trigger current
Gate trigger voltage
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
V
T
I
H
I
L
I
GT
V
GT
Test Conditions
Min
600
Typ
—
2.5
4.0
1.23
0.1
0.17
15
0.4
Max
—
—
—
1.8
6.0
10
200
1.5
Unit
V
A
A
V
mA
mA
uA
V
half sine wave; T
mb
< 103
o
C
all conduction angles
I
T
=5.0A
V
D
=12 V; I
GT
= 0.1 A
V
D
=12 V; I
GT
= 0.1 A
V
D
=12 V; I
T
= 0.1 A
V
D
=12 V; I
T
= 0.1 A
—
—
—
—
—
—
—