TIGER ELECTRONIC CO.,LTD
Product specification
NPN Silicon High Power Ttransistors
DESCRIPTION
The BUV48A transistors are designed for high-voltage, high-speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line-operated switchmode applications such as:
◆
Switching Regulators
◆
Inverters
◆
Solenoid and Relay Drivers
◆
Motor Controls
◆
Deflection Circuits
BUV48A
ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
1000
450
7.0
15
5.0
150
150
-55~150
Unit
V
V
V
A
A
W
℃
℃
Storage Temperature
TO-3PN
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ )
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
Symbol
Test Conditions
V
CE
=1000V, I
E
=0
V
EB
=5.0V, I
C
=0
I
C
=100mA, I
B
=0
V
CE
=5V, I
C
=8.0A
I
C
=8.0A,I
B
=1.6A
I
C
=12A,I
B
=2.4A
Min.
—
—
450
8
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
Max.
0.5
0.1
—
—
1.5
5.0
1.6
2.0
V
us
V
Unit
mA
mA
V
I
CES
I
EBO
V
CEO
h
FE
V
CE(sat)
V
BE(sat)
I
C
=8.0A,I
B
=1.6A
T
S
V
CC
=300V, T
p
= 30 us
TGS [ Tiger Electronic Co.,Ltd ]
