TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon Power Ttransistors
BD139 / BD140
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
O
l
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
80
80
5
1.5
0.5
12.5
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
Storage Temperature
TO-126
ELECTRICAL CHARACTERISTICS ( Ta = 25
O
C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
Test Conditions
V
CB
=80V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=30mA, I
B
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=150mA
Min.
—
—
80
25
40
—
—
3
Typ.
—
—
—
—
—
—
—
—
Max.
10
10
—
—
250
0.5
1.0
—
V
V
MHz
Unit
uA
uA
V
I
CEO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
V
CE(sat)
I
C
=0.5A,I
B
=50mA
V
BE(sat)
V
CE
=2V,I
C
=0.5A
f
T
V
CE
=10V,I
C
=500mA
TGS [ Tiger Electronic Co.,Ltd ]
