TIGER ELECTRONIC CO.,LTD
Product specification
NPN Silicon Power Ttransistors
2SD560
DESCRIPTION
The 2SD560 is a mold power transistor developed for lowfrequency
power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
O
l
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
150
100
7.0
5.0
0.5
30
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
Storage Temperature
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base Saturation Voltage
Current Gain Bandwidth Product
Symbol
Test Conditions
V
CB
=100V, I
E
=0
V
EB
=7.0V, I
C
=0
I
C
=30mA, I
B
=0
V
CE
=2.0V, I
C
=3.0A
V
CE
=2.0V, I
C
=5.0A
Min.
—
—
100
2000
500
—
—
4.0
Typ.
—
—
—
—
—
—
—
—
Max.
1.0
10
—
15000
—
1.5
2.0
—
V
V
MHz
Unit
uA
uA
V
O
I
CBO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
V
CE(sat)
I
C
=3.0A,I
B
=3.0mA
V
BE(sat)
I
C
=3.0A,I
B
=3.0mA
f
T
V
CE
=10V,I
C
=500mA
hFE Classification
classification
hFE1
R
2000~5000
O
3000~7000
Y
5000~15000
TGS [ Tiger Electronic Co.,Ltd ]
