TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC2120
TRANSISTOR (NPN)
1. EMITTER
FEATURES
High DC Current Gain
Complementary to 2SA950
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
35
30
5
0.8
600
208
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE
C
ob
f
T
Test
conditions
Min
35
30
5
0.1
0.1
0.1
100
320
0.5
0.8
13
100
V
V
pF
MHz
Typ
Max
Unit
V
V
V
μA
μA
μA
I
C
= 0.1mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=0.1mA,I
C
=0
V
CB
=35V,I
E
=0
V
CE
=25V,I
B
=0
V
EB
=5V,I
C
=0
V
CE
=1V, I
C
=100mA
I
C
=500mA,I
B
=20mA
V
CE
=1V, I
C
=10mA
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=5V,I
C
=10mA
CLASSIFICATION OF h
FE
RANK
RANGE
O
100-200
Y
160-320
B,Dec,2011
TGS [ Tiger Electronic Co.,Ltd ]
