TIGER ELECTRONIC CO.,LTD
SOT-23
2SC1815LT1
FEATURES
Power dissipation
MARKING : C1815=HF
Plastic-Encapsulate Transistors
SOT-23
TRANSISTOR (NPN)
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Value
60
50
5
150
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
Test
conditions
MIN
60
50
0.1
0.1
0.1
130
400
0.25
1
80
V
V
MHz
TYP
MAX
UNIT
V
V
uA
uA
uA
I
C
= 100uA, I
E
=0
I
C
= 0.1mA, I
B
=0
V
CB
=60V, I
E
=0
V
CE
=50V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
= 6V, I
C
= 2mA
I
C
=100mA, I
B
= 10mA
I
C
=100mA, I
B
= 10mA
V
CE
=10V, I
C
= 1mA,
f=30MHz
CLASSIFICATION
Rank
Range
OF
h
FE
L
130-200
H
200-400