TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SC1674
TRANSISTOR (NPN)
TO-92
FEATURES
High current gain bandwidth product f
T
=600MHz(Typ.),
High power gain G
PE
=22dB at f=100MHz
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power dissipation
Junction Temperature
Storage Temperature
Value
30
20
4
20
250
150
-55-150
Units
V
V
V
mA
mW
℃
℃
1 2 3
1.EMITTER
2 COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(ON)
Test
conditions
MIN
30
20
4
0.1
0.1
40
180
0.3
0.65
400
1.3
0.77
V
V
MHz
MAX
UNIT
V
V
V
μA
μA
I
C
= 100μA, I
E
=0
I
C
= 1mA, I
B
=0
I
E
= 100μA,I
C
=0
V
CB
= 30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=6 V, I
C
= 1mA
I
C
=10mA, I
B
= 1mA
V
CE
=6V, I
C
= 1mA
V
CE
=6 V, I
C
= 1mA
V
CE
=6V,I
E
=0, f =1MHz
f
T
C
ob
pF
CLASSIFICATION OF h
FE
Rank
Range
Y
40-80
GR
60-120
BL
90-180
TGS [ Tiger Electronic Co.,Ltd ]
