TIGER ELECTRONIC CO.,LTD
2SA733
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The
2SA733
is designed for use in driver stage of AF amplifier
applications..
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ..................................................................................... +150°C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage ...................................................................................... 50 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ....................................................................................................... 100 mA
IB Base Current ............................................................................................................... 20 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(on)
hFE
fT
Cob
Min.
60
50
5
-
-
-
0.55
90
100
-
Typ.
-
-
-
-
-
0.18
0.62
200
180
4.5
Max.
-
-
-
0.1
0.1
0.3
0.7
600
-
6
Unit
V
V
V
uA
uA
V
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=10V, f=1MHz, IE=0
Classification Of hFE1
Rank
Range
R
90-180
Q
135-270
P
200-400
K
300-600
TIGER ELECTRONIC CO.,LTD
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