TIGER ELECTRONIC CO.,LTD
2N6520
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The 2N6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
•
High Collector-Emitter Breakdown Voltage.
•
Low Collector-Emitter Saturation Voltage.
•
The 2N6520 is complementary to 2N6517.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................................... -55~+150°C
Junction Temperature ................................................................................................. +150°C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... 350 V
VCEO Collector to Emitter Voltage................................................................................................. 350 V
VEBO Emitter to Base Voltage........................................................................................................... 5 V
IC Collector Current ................................................................................................................... 500 mA
IB Base Current ......................................................................................................................... 250 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
VCE(SAT)4
VBE(ON)
VBE(SAT)1
VBE(SAT)2
VBE(SAT)3
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Min.
350
350
5
-
-
-
-
-
-
-
-
-
-
20
30
30
20
15
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.30
0.35
0.50
1.00
2
0.75
0.85
0.90
-
-
200
200
-
200
6
Unit
V
V
V
nA
nA
V
V
V
V
V
V
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=250V, IE=0
VEB=4V, IC=0
IC=10mA IB=1mA
IC=20mA IB=2mA
IC=30mA IB=3mA
IC=50mA IB=5mA
IC=100mA VCE=10V
IC=10mA IB=1mA
IC=20mA IB=2mA
IC=30mA IB=3mA
VCE=10V IC=1mA
VCE=10V IC=10mA
VCE=10V IC=30mA
VCE=10V IC=50mA
VCE=10V IC=100mA
IC=10mA VCE=20V f=20MHz
VCB=20V f=1MHz IE=0
TIGER ELECTRONIC CO.,LTD
MHz
pF