TIGER ELECTRONIC CO.,LTD
2N4403
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The 2N4403 is designed for general purpose switching and
amplifier applications.
Features
•
Complementary to 2N4401.
•
High Power Dissipation : 625mW at 25°C
•
High DC Current Gain : 100-300 at 150mA
•
High Breakdown Voltage : 40V Min.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ..................................................................................... +150°C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage ........................................................................................... 5.0 V
IC Collector Current ........................................................................................................ 600 mA
CHARACTERISTICS(Ta=25
°C
)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Min.
40
40
5.0
-
-
-
750
-
30
60
100
100
20
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
750
0.95
1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
nA
mV
mV
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA. IB=0
IE=10uA, IC=0
VCE=35V, VBE=0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA
IC=20mA, VCE=10V, f=100MHz
VCE=10V, IE=0, f=1MHz
MHz
PF
TIGER ELECTRONIC CO.,LTD