TIGER ELECTRONIC CO.,LTD
2N4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The 2N4401 is designed for general purpose switching and
amplifier applications.
Features
•
Complementary to 2N4403.
•
High Power Dissipation : 625 mW at 25°C
•
High DC Current Gain : 100-300 at 150mA
•
High Breakdown Voltage : 40 V Min.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature..................................................................................... +150°C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage ........................................................................................... 5.0 V
IC Collector Current ........................................................................................................ 600 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Min.
60
40
5.0
-
-
-
750
-
20
40
80
100
40
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
mV
mV
mV
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCE=35V, VBE=0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA,, f=100MHz
VCB=5V, IE=0, f=1MHz
MHz
pF
TIGER ELECTRONIC CO.,LTD