TUNING VARACTOR
High Q silicon hyperabrupt junction tuning varactor
HIGH Q S ILICON HYP ERABRUP T J UNCTION TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated m esa technology. Packaged or chip devices are available for linear electronic tuning from
VHF up to Ku band.
Characteristics @ Ta = +25° C
Reverse breakdown voltage, Vb = @ 10 µA: 20 V m in.
Reverse current,
Ir @ 16 V:
200 nA
Figure of
merit (Q)
Total capacitance (pF)
Ct
Tuning
ratio
Test
f = 50 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz Ct1V/Ct12V Ct1V/CT20V
conditions
Vr = 4 V Vr = 1 V Vr = 4 V Vr = 12 V Vr = 20 V f = 1 MHz
f = 1 MHz
typ.
4.9
(1)
Type
Case
typ.
2200
2000
1700
1400
1000
700
typ.
2.5
3.6
5.2
7.7
11
±20%
1.2
1.7
2.4
3.5
typ.
0.6
0.8
1.1
typ.
0.5
0.7
0.9
1.3
typ.
4.1
4.4
4.7
4.9
5.0
5.1
5.2
5.2
Chip
DH76010 F27d
DH76015 F27d
DH76022 F27d
DH76033 F27d
DH76047 F27d
DH76068 F27d
DH76100 F27d
DH76150 F27d
EH76010
EH76015
EH76022
EH76033
EH76047
EH76068
EH76100
EH76150
5.4
5.8
6.1
6.4
6.5
6.7
6.8
1.6
4.9
6.9
2.2
3.0
4.5
6.6
1.7
16
2.4
3.5
5.1
400
140
23
34
10.2
15.2
(1)
Custom cases available on request
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
Storage
: -65° C to +150° C
Typical junction capacitance reverse voltage
Profils in Cj
100.00
10.00
76010
76015
76022
76033
76047
76068
76100
76150
1.00
0.01
0.1
10
100
0.10
VR (V)
1-39
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TEMEX [ TEMEX ]
