SILICON PIN DIODES
Microwave applications
PACKAGED DIODES
NOMINAL MICROWAVE CHARACTERISTICS
Leakage Insertion
Peak
Thermal
resistance
RTH
Threshold
PL
CW power
PIN
power
power
loss
Characteristics at 25°C
PIN
POUT
L
f = 2.7 GHz
1dB
Limiting
f = 2.7 GHz
PIN = -10
dBm
1 µs
Pulse
1% DC
dBm
P
= 1W
diss
Test conditions
f = 2.7 GHz
case F 27d
Standard case (2)
°C/ W
dBm
dBm
dB
W
Type
C = 0.18 pF
C = 0.12 pF
b
b
max
typ.
typ.
typ.
max
max
(3)
(3)
DH60033
DH60034
DH60035
DH60036
DH60037
DH60052
DH60053
DH60054
DH60055
DH60056
DH60057
DH60072
DH60074
DH60076
DH60102
DH60104
DH60106
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
80
80
70
60
50
80
70
60
50
45
45
70
50
40
60
50
35
+ 10
+ 10
+ 10
+ 10
+ 10
+ 15
+ 15
+ 15
+ 15
+ 15
+ 15
+ 18
+ 18
+ 18
+ 20
+ 20
+ 20
+ 20
+ 20
+ 21
+ 22
+ 23
+ 24
+ 24
+ 25
+ 26
+ 27
+ 28
+ 27
+ 30
+ 32
+ 31
+ 33
+ 35
0.1
0.1
0.1
0.2
0.2
0.1
0.1
0.1
0.1
0.2
0.2
0.1
0.2
0.2
0.2
0.2
0.3
+ 50
+ 50
+ 52
+ 53
+ 56
+ 52
+ 52
+ 53
+ 54
+ 57
+ 58
+ 54
+ 55
+ 58
+ 56
+ 59
+ 61
2.0
2.0
2.5
3.0
4.0
2.5
2.5
3.0
3.5
4.0
5.0
3.0
4.0
5.0
3.5
5.0
7.0
(2) Other capacitance values available on request
(3) = C +C
Tem perature ranges:
Operating junction (T ) : -55° C to +125°C
C
T
j
b
j
Storage
: -65° C to +200° C
12-27
Vol. 1
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TEMEX [ TEMEX ]
