SILICON PIN DIODES
Microwave applications
SILICON LIMITER PIN DIODES
Description
These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in
hermetic ceramic packages. They operate as power dependent variable resistances and provide
passive receiver protection (low noise amplifiers, mixers, and detectors).
Electrical characteristics
CHIP DIODES
G
OLD
D
IA
Ø
Breakdown
voltage
V
BR
I
R
= 10 µA
µm
typ.
EH60033
EH60034
EH60035
EH60036
EH60037
EH60052
EH60053
EH60054
EH60055
EH60056
EH60057
EH60072
EH60074
EH60076
EH60102
EH60104
EH60106
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
25
30
35
55
65
30
35
40
50
65
80
40
50
80
50
70
110
min.
25
25
25
25
25
50
50
50
50
50
50
70
70
70
90
90
90
V
max
50
50
50
50
50
70
70
70
70
70
70
90
90
90
120
120
120
PACKAGED DIODES
Junction
capacitance
Cj0
V
R
= 0 V
f = 1 MHz
pF
typ.
0.14
0.20
0.28
0.45
0.70
0.10
0.14
0.20
0.28
0.45
0.70
0.10
0.20
0.45
0.10
0.20
0.45
Junction
capacitance
Cj
-6
(1)
V
R
= 6 V
f = 1 MHz
pF
min.
0.08
0.12
0.17
0.23
0.40
0.06
0.08
0.12
0.17
0.23
0.40
0.06
0.12
0.23
0.06
0.12
0.23
max
0.12
0.17
0.23
0.40
0.60
0.08
0.12
0.17
0.23
0.40
0.60
0.08
0.17
0.40
0.08
0.17
0.40
Minority
Series
carrier
resistance lifetime
R
SF
τ
I
Characteristics at 25°C
Test conditions
Type
Case
I
F
= 10 mA I
F
= 10 mA
f = 120 MHz I
R
= 6 mA
Ω
max
1.8
1.5
1.0
0.9
0.7
1.8
1.4
1.1
1.0
0.9
0.8
1.7
1.4
0.9
1.7
1.2
0.8
ns
typ.
20
20
25
30
40
30
30
35
40
50
60
50
60
100
150
250
400
(1)
Other values of capacitance available on request
12-26
Vol. 1
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