POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
1
2
3
4
5
6
7
8
TC4626
TC4627
ELECTRICAL CHARACTERISTICS: TA = Over Operating Temperature Range VDD = 5V C1 = C2 = C3 10µF
unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Driver Input
VIH
Logic 1, Input Voltage
Logic 0, Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
10
V
V
VIL
IIN
0V ≤ VIN ≤ VBOOST
– 10
µA
Driver Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
Output Resistance, High
VDRIVE – 0.025
—
—
—
—
V
V
0.025
IOUT = 10 mA, VDD = 5V
C & E Version (TA = 70°C or 85°C)
M Version (TA = 125°C)
—
—
15
15
20
25
Ω
RO
Output Resistance, Low
Peak Output Current
IOUT = 10 mA, VDD = 5V
C & E Version (TA = 70°C or 85°C)
M Version (TA = 125°C)
—
—
10
10
13
15
Ω
IPK
—
1.5
—
A
Switching Time
tR
Rise Time
Fall Time
Test Figure 1,2
Test Figure 1,2
Test Figure 1,2
Test Figure 1,2
—
—
—
—
—
—
—
55
50
60
70
—
nsec
nsec
nsec
nsec
kHz
tF
tD1
tD2
FMAX
Delay Time
Delay Time
—
—
Maximum Switching Frequency Test Figure 1
750
VDD = 5V, VBOOST > 8.5V
Voltage Booster
R3
Voltage Boost Output
Source Resistance
IL = 10 mA, VDD = 5V
—
—
400
170
500
300
Ω
Ω
R2
Voltage Doubler Output
Source Resistance
FOSC
VOSC
Oscillator Frequency
5
—
—
50
10
kHz
V
Oscillator Amplitude
Measured at C1-
RLOAD = 10kΩ
4.5
UV
@ VBOOST
Undervoltage Threshold
Start Up Voltage
@VDD = 5V
7.0
7.8
11.3
—
8.5
12
—
V
V
V
VSTART
@ VBOOST
10.5
14.6
VBOOST
No Load
Power Supply
IDD
Power Supply Current
Supply Voltage
VIN = LOW or HIGH
—
—
—
4
mA
V
VDD
4.0
6.0
TELCOM SEMICONDUCTOR, INC.
4-273
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
