LOGIC-INPUT CMOS
QUAD DRIVERS
1
2
3
4
5
6
7
8
TC4467
TC4468
TC4469
Transition power dissipation arises in the
complementary configuration (TC446X) because the
output stage N-channel and P-channel MOS transistors
are ON simultaneously for a very short period when the
output changes. The transition power dissipation is
approximately:
Maximum operating temperature:
TJ – θJA (PD) = 141°C,
where: TJ = Maximum allowable junction temperature
(+150°C)
θJA = Junction-to-ambient thermal resistance
(83.3°C/W) 14-pin plastic package.
PT = f VS (10 ϫ 10–9).
NOTE: Ambient operating temperature should not exceed +85°C for
"EJD" device or +125°C for "MJD" device.
Package power dissipation is the sum of load, quies-
cent and transition power dissipations. An example shows
the relative magnitude for each term:
C = 1000 pF capacitive load
VS = 15V
D = 50%
f
= 200 kHz
PD = Package Power Dissipation = PL + PQ + PT
= 45 mW + 35 mW + 30 mW = 110 mW.
V
DD
1 µF FILM
0.1 µF CERAMIC
V
+5V
14
90%
1
1A
13
12
11
10
OUT
2
INPUT
(A, B)
470 pF
1B
3
2A
10%
0V
4
2B
V
DD
90%
90%
5
3A
t
t
D1
D2
6
t
t
F
R
OUTPUT
0V
3B
8
4A
10%
10%
9
4B
Input: 100 kHz, square wave,
RISE = tFALL ≤ 10nsec
7
t
Figure 1. Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
4-265
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
