LOGIC-INPUT CMOS
QUAD DRIVERS
1
2
3
4
5
6
7
8
TC4467
TC4468
TC4469
ELECTRICAL CHARACTERISTICS: Measured throughout operating temperature range with 4.5V ≤ VDD ≤ 18V,
unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
(Note 3)
2.4
—
—
—
—
—
0.8
10
V
VIL
(Note 3)
V
IIN
0V ≤ VIN ≤ VDD
– 10
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
ILOAD = 100 µA (Note 1)
ILOAD = 10 mA (Note 1)
IOUT = 10 mA, VDD = 18V
VDD – 0.025
—
—
—
0.30
30
V
—
—
V
20
1.2
—
Ω
IPK
—
—
A
I
Latch-Up Protection
4.5V ≤ VDD ≤ 16V
500
—
mA
Withstand Reverse Current
Switching Time
tR
Rise Time
Figure 1
Figure 1
Figure 1
Figure 1
—
—
—
—
—
—
—
—
50
50
nsec
nsec
nsec
nsec
tF
Fall Time
tD1
Delay Time
Delay Time
100
100
tD2
Power Supply
IS
IS
Power Supply Current
Power Supply Voltage
—
—
—
8
mA
V
Note 2
4.5
18
NOTES: 1. Totem-pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device.
2. When driving all four outputs simultaneously in the same direction, VDD shall be limited to 16V. This reduces the chance that internal
dv/dt will cause high-power dissipation in the device.
3. The input threshold has about 50 mV of hysteresis centered at approximately 1.5V. Slow moving inputs will force the device to
dissipate high peak currents as the input transitions through this band. Input rise times should be kept below 5 µs to avoid high internal
peak currents during input transitions. Static input levels should also be maintained above the maximum or below the minimum input
levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
PIN CONFIGURATIONS
16-Pin SOIC (Wide)
14-Pin Plastic DIP/CerDIP
1A
1B
V
DD
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1A 1
1B 2
2A 3
2B 4
14 V
DD
V
DD
13 1Y
2A
1Y
2Y
3Y
4Y
4B
4A
12 2Y
11 3Y
10 4Y
2B
TC4467/8/9
TC4467/8/9
3A
3B
3A 5
3B 6
GND
GND
9
8
4B
4A
GND 7
TELCOM SEMICONDUCTOR, INC.
4-263
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
