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TC4467MJD 参数 Datasheet PDF下载

TC4467MJD图片预览
型号: TC4467MJD
PDF下载: 下载PDF文件 查看货源
内容描述: 逻辑输入CMOS Quad驱动程序 [LOGIC-INPUT CMOS QUAD DRIVERS]
分类和应用: 驱动器接口集成电路输入元件
文件页数/大小: 9 页 / 121 K
品牌: TELCOM [ TELCOM SEMICONDUCTOR, INC ]
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LOGIC-INPUT CMOS  
QUAD DRIVERS  
TC4467  
TC4468  
TC4469  
Package Thermal Resistance  
ABSOLUTE MAXIMUM RATINGS*  
14-Pin CerDIP  
RθJ-A ...................................... 100°C/W  
RθJ-C ......................................... 23°C/W  
Supply Voltage ......................................................... +20V  
Input Voltage ......................... (GND – 5V) to (VDD + 0.3V)  
Maximum Chip Temperature  
Operating ........................................................ +150°C  
Storage ............................................. – 65° to +150°C  
Maximum Lead Temperature  
14-Pin Plastic DIP RθJ-A ......................................... 80°C/W  
RθJ-C ......................................... 35°C/W  
16-Pin Wide SOIC RθJ-A ......................................... 95°C/W  
RθJ-C ......................................... 28°C/W  
*Static-sensitive device. Unused devices must be stored in conductive  
material. Protect devices from static discharge and static fields. Stresses  
above those listed under Absolute Maximum Ratings may cause perma-  
nent damage to the device. These are stress ratings only and functional  
operation of the device at these or any other conditions above those  
indicated in the operational sections of the specifications is not implied.  
Exposure to Absolute Maximum Rating Conditions for extended periods  
may affect device reliability.  
(Soldering, 10 sec) ......................................... +300°C  
Operating Ambient Temperature Range  
C Device .................................................. 0° to +70°C  
E Device ............................................. – 40° to +85°C  
M Device........................................... – 55° to +125°C  
Package Power Dissipation (TA 70°C)  
14-Pin CerDIP ................................................840mW  
14-Pin Plastic DIP...........................................800mW  
16-Pin Wide SOIC ..........................................760mW  
ELECTRICAL CHARACTERISTICS: Measured at TA = +25°C with 4.5V VDD 18V, unless otherwise specified.  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
Input  
VIH  
Logic 1, High Input Voltage  
Logic 0, Low Input Voltage  
Input Current  
Note 3  
2.4  
0
VDD  
0.8  
1
V
VIL  
Note 3  
V
IIN  
0V VIN VDD  
– 1  
µA  
Output  
VOH  
VOL  
RO  
High Output Voltage  
Low Output Voltage  
Output Resistance  
ILOAD = 100µA (Note 1)  
ILOAD = 10mA (Note 1)  
IOUT = 10mA, VDD = 18V  
VDD – 0.025  
0.15  
15  
V
V
10  
1.2  
IPK  
Peak Output Current  
Continuous Output Current  
A
IDC  
Single Output  
Total Package  
300  
500  
mA  
I
Latch-Up Protection  
4.5V VDD 16V  
500  
mA  
Withstand Reverse Current  
Switching Time  
tR  
Rise Time  
Figure 1  
Figure 1  
Figure 1  
Figure 1  
15  
15  
40  
40  
25  
25  
75  
75  
nsec  
nsec  
nsec  
nsec  
tF  
Fall Time  
tD1  
Delay Time  
Delay Time  
tD2  
Power Supply  
IS  
Power Supply Current  
Power Supply Voltage  
1.5  
4
mA  
V
VDD  
Note 2  
4.5  
18  
TRUTH TABLE  
Part No.  
TC4467 NAND  
TC4468 AND  
TC4469 AND/INV  
INPUTS A  
INPUTS B  
H
H
H
L
L
H
L
L
H
H
H
L
L
H
L
L
H
H
H
L
L
H
L
L
OUTPUTS TC446X  
L
H
H
H
H
L
L
L
L
H
L
L
H = High L = Low  
4-262  
TELCOM SEMICONDUCTOR, INC.